1N5811US
vs
JAN1N5811US
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
VPT COMPONENTS
|
| Reach Compliance Code |
unknown
|
compliant
|
| Application |
GENERAL PURPOSE
|
ULTRA FAST RECOVERY POWER
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.875 V
|
|
| Non-rep Pk Forward Current-Max |
125 A
|
125 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
6 A
|
3 A
|
| Rep Pk Reverse Voltage-Max |
150 V
|
150 V
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Recovery Time-Max |
0.03 µs
|
0.03 µs
|
| Base Number Matches |
12
|
9
|
| Rohs Code |
|
No
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Case Connection |
|
ISOLATED
|
| JESD-30 Code |
|
O-LELF-R2
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Qualification Status |
|
Qualified
|
| Reference Standard |
|
MIL-19500
|
| Surface Mount |
|
YES
|
| Terminal Form |
|
WRAP AROUND
|
| Terminal Position |
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare JAN1N5811US with alternatives