1N5817
vs
LL5817F1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
YANGZHOU YANGJIE ELECTRONICS CO LTD
|
| Reach Compliance Code |
compliant
|
compliant
|
| Additional Feature |
FREE WHEELING DIODE, LOW POWER LOSS
|
|
| Application |
EFFICIENCY
|
GENERAL PURPOSE
|
| Breakdown Voltage-Min |
20 V
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.75 V
|
0.45 V
|
| JEDEC-95 Code |
DO-41
|
DO-213AB
|
| JESD-30 Code |
O-PALF-W2
|
O-XELF-R2
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
25 A
|
25 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
MIL-STD-202
|
|
| Rep Pk Reverse Voltage-Max |
20 V
|
20 V
|
| Reverse Current-Max |
100 µA
|
1000 µA
|
| Reverse Test Voltage |
20 V
|
|
| Surface Mount |
NO
|
YES
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
WIRE
|
WRAP AROUND
|
| Terminal Position |
AXIAL
|
END
|
| Base Number Matches |
98
|
1
|
| Package Description |
|
O-XELF-R2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 1N5817 with alternatives
Compare LL5817F1 with alternatives