1N5817 vs SB120G-SMA-R feature comparison

1N5817 Sangdest Microelectronics (Nanjing) Co Ltd

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SB120G-SMA-R Unisonic Technologies Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD UNISONIC TECHNOLOGIES CO LTD
Reach Compliance Code compliant compliant
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
Application EFFICIENCY EFFICIENCY
Breakdown Voltage-Min 20 V 20 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.75 V 0.5 V
JEDEC-95 Code DO-41 DO-214AC
JESD-30 Code O-PALF-W2 R-PDSO-C2
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 25 A 25 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Qualification Status Not Qualified
Reference Standard MIL-STD-202
Rep Pk Reverse Voltage-Max 20 V 20 V
Reverse Current-Max 100 µA 1000 µA
Reverse Test Voltage 20 V 20 V
Surface Mount NO YES
Technology SCHOTTKY SCHOTTKY
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 98 1
ECCN Code EAR99
HTS Code 8541.10.00.80
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1N5817 with alternatives

Compare SB120G-SMA-R with alternatives