1N5817-GT3 vs DLSF12 feature comparison

1N5817-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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DLSF12 International Semiconductor Inc

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD INTERNATIONAL SEMICONDUCTOR INC
Package Description O-PALF-W2
Reach Compliance Code unknown unknown
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 20 V 100 V
Surface Mount NO YES
Technology SCHOTTKY
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 2 3
ECCN Code EAR99
Forward Voltage-Max (VF) 0.975 V
Non-rep Pk Forward Current-Max 30 A
Operating Temperature-Max 175 °C
Reverse Recovery Time-Max 0.035 µs

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