1N5817G
vs
1N5817-T
feature comparison
| Pbfree Code |
No
|
No
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
DIODES INC
|
| Part Package Code |
DO-41
|
DO-41
|
| Package Description |
HERMETIC SEALED, GLASS PACKAGE-2
|
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
HIGH RELIABILITY
|
LOW POWER LOSS, FREE WHEELING DIODE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.45 V
|
0.75 V
|
| JEDEC-95 Code |
DO-41
|
DO-41
|
| JESD-30 Code |
O-LALF-W2
|
O-PALF-W2
|
| Non-rep Pk Forward Current-Max |
50 A
|
25 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
125 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
20 V
|
20 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
5
|
1
|
| Samacsys Manufacturer |
|
Diodes Incorporated
|
| Application |
|
EFFICIENCY
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Reverse Current-Max |
|
1000 µA
|
| Reverse Test Voltage |
|
20 V
|
| Terminal Finish |
|
Bright Tin (Sn)
|
|
|
|
Compare 1N5817G with alternatives
Compare 1N5817-T with alternatives