1N5818 vs H1N5818 feature comparison

1N5818 Galaxy Microelectronics

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H1N5818 HSMC Corporation

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD HSMC CORP
Part Package Code DO-41
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.55 V 0.55 V
Non-rep Pk Forward Current-Max 25 A 25 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 125 °C 125 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 30 V 30 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Base Number Matches 2 1
Application GENERAL PURPOSE

Compare 1N5818 with alternatives

Compare H1N5818 with alternatives