1N5819G vs JANS1N5819-1 feature comparison

1N5819G Microchip Technology Inc

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JANS1N5819-1 Microchip Technology Inc

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Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Package Description HERMETIC SEALED, GLASS PACKAGE-2 HERMETIC SEALED PACKAGE-2
Reach Compliance Code unknown compliant
Factory Lead Time 24 Weeks 32 Weeks
Samacsys Manufacturer Microchip
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-LALF-W2 O-LALF-W2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Qualified
Rep Pk Reverse Voltage-Max 40 V 45 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Application GENERAL PURPOSE
Forward Voltage-Max (VF) 0.49 V
JESD-609 Code e0
Non-rep Pk Forward Current-Max 25 A
Reference Standard MIL-PRF-19500; MIL-STD-750
Reverse Current-Max 50 µA
Reverse Test Voltage 45 V
Terminal Finish TIN LEAD

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