1N5819TR vs 1N5819G feature comparison

1N5819TR Central Semiconductor Corp

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1N5819G Microsemi Corporation

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Part Life Cycle Code Active Transferred
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.6 V
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-XALF-W2 O-LALF-W2
JESD-609 Code e0
Non-rep Pk Forward Current-Max 25 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 1 A 1 A
Package Body Material UNSPECIFIED GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 40 V 40 V
Reverse Current-Max 1000 µA
Reverse Test Voltage 40 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 2
Rohs Code No
Part Package Code DO-41
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
Additional Feature HIGH RELIABILITY
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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