1N5822
vs
JANTX1N5822
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
HITANO ENTERPRISE CORP
|
COMPENSATED DEVICES INC
|
| Reach Compliance Code |
compliant
|
unknown
|
| Additional Feature |
HIGH RELIABILITY
|
METALLURGICALLY BONDED
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Breakdown Voltage-Min |
40 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.95 V
|
0.7 V
|
| JEDEC-95 Code |
DO-27
|
|
| JESD-30 Code |
O-PALF-W2
|
O-LALF-W2
|
| Non-rep Pk Forward Current-Max |
80 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Reference Standard |
MIL-STD-202E
|
MIL-19500/620
|
| Rep Pk Reverse Voltage-Max |
40 V
|
40 V
|
| Reverse Current-Max |
2000 µA
|
100 µA
|
| Reverse Test Voltage |
40 V
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
87
|
6
|
| Qualification Status |
|
Not Qualified
|
|
|
|