1N5934B vs FS10SM-12 feature comparison

1N5934B Microsemi Corporation

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FS10SM-12 Mitsubishi Electric

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MITSUBISHI ELECTRIC CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50
Case Connection ISOLATED DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Diode Element Material SILICON
Diode Type ZENER DIODE
Dynamic Impedance-Max 19 Ω
JEDEC-95 Code DO-41
JESD-30 Code O-LALF-W2 R-PSFM-T3
JESD-609 Code e0
Knee Impedance-Max 700 Ω
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 200 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM FLANGE MOUNT
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1.5 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 24 V
Reverse Current-Max 1 µA
Surface Mount NO NO
Technology ZENER
Terminal Finish TIN LEAD
Terminal Form WIRE THROUGH-HOLE
Terminal Position AXIAL SINGLE
Voltage Tol-Max 5%
Working Test Current 15.6 mA
Base Number Matches 116 1
Package Description FLANGE MOUNT, R-PSFM-T3
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.94 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 30 A
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare 1N5934B with alternatives

Compare FS10SM-12 with alternatives