1N5934B
vs
FS10SM-12
feature comparison
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
MICROSEMI CORP
|
MITSUBISHI ELECTRIC CORP
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
|
Case Connection |
ISOLATED
|
DRAIN
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
Diode Element Material |
SILICON
|
|
Diode Type |
ZENER DIODE
|
|
Dynamic Impedance-Max |
19 Ω
|
|
JEDEC-95 Code |
DO-41
|
|
JESD-30 Code |
O-LALF-W2
|
R-PSFM-T3
|
JESD-609 Code |
e0
|
|
Knee Impedance-Max |
700 Ω
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Temperature-Max |
200 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
RECTANGULAR
|
Package Style |
LONG FORM
|
FLANGE MOUNT
|
Polarity |
UNIDIRECTIONAL
|
|
Power Dissipation-Max |
1.5 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Voltage-Nom |
24 V
|
|
Reverse Current-Max |
1 µA
|
|
Surface Mount |
NO
|
NO
|
Technology |
ZENER
|
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
WIRE
|
THROUGH-HOLE
|
Terminal Position |
AXIAL
|
SINGLE
|
Voltage Tol-Max |
5%
|
|
Working Test Current |
15.6 mA
|
|
Base Number Matches |
116
|
1
|
Package Description |
|
FLANGE MOUNT, R-PSFM-T3
|
DS Breakdown Voltage-Min |
|
600 V
|
Drain Current-Max (ID) |
|
10 A
|
Drain-source On Resistance-Max |
|
0.94 Ω
|
FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
Operating Mode |
|
ENHANCEMENT MODE
|
Polarity/Channel Type |
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
|
150 W
|
Pulsed Drain Current-Max (IDM) |
|
30 A
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
Compare 1N5934B with alternatives
Compare FS10SM-12 with alternatives