1N6336BD2A.RAD
vs
1N5245D7E3
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
TT ELECTRONICS PLC
|
MICROSEMI CORP
|
| Package Description |
R-CDSO-N2
|
O-XALF-W2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JESD-30 Code |
R-CDSO-N2
|
O-XALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
|
| Reference Voltage-Nom |
33 V
|
15 V
|
| Surface Mount |
YES
|
NO
|
| Technology |
ZENER
|
ZENER
|
| Terminal Form |
NO LEAD
|
WIRE
|
| Terminal Position |
DUAL
|
AXIAL
|
| Voltage Tol-Max |
5%
|
20%
|
| Working Test Current |
3.8 mA
|
8.5 mA
|
| Base Number Matches |
1
|
1
|
| Case Connection |
|
ISOLATED
|
|
|
|
Compare 1N6336BD2A.RAD with alternatives
Compare 1N5245D7E3 with alternatives