1N6642USE3
vs
1N6642UE3
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
ROHS COMPLIANT, HERMETIC SEALED, GLASS, D-5B, SQ-MELF, B PACKAGE-2
|
HERMETIC SEALED, GLASS, D-5D, 2 PIN
|
| Reach Compliance Code |
compliant
|
compliant
|
| Factory Lead Time |
23 Weeks
|
23 Weeks
|
| Samacsys Manufacturer |
Microchip
|
Microchip
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
0.3 A
|
0.3 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
75 V
|
|
| Reverse Recovery Time-Max |
0.005 µs
|
0.005 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Base Number Matches |
2
|
2
|
| Additional Feature |
|
METALLURGICALLY BONDED
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation-Max |
|
0.75 W
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 1N6642USE3 with alternatives
Compare 1N6642UE3 with alternatives