1N829116
vs
JAN1N829-1
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
VPT COMPONENTS
|
| Package Description |
O-LALF-W2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JEDEC-95 Code |
DO-34
|
DO-35
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
175 °C
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.4 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Reference Voltage-Nom |
6.2 V
|
6.2 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
ZENER
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Voltage Temp Coeff-Max |
0.031 mV/°C
|
0.031 mV/°C
|
| Working Test Current |
7.5 mA
|
7.5 mA
|
| Base Number Matches |
1
|
9
|
| Rohs Code |
|
No
|
| Additional Feature |
|
METALLURGICALLY BONDED
|
| Dynamic Impedance-Max |
|
15 Ω
|
| Operating Temperature-Min |
|
-65 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Polarity |
|
UNIDIRECTIONAL
|
| Reference Standard |
|
MIL-19500
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Voltage Tol-Max |
|
4.84%
|
|
|
|
Compare 1N829116 with alternatives
Compare JAN1N829-1 with alternatives