1N914B
vs
1N3606FV
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
ROHM CO LTD
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Taiwan Semiconductor
|
|
| Application |
FAST RECOVERY
|
|
| Breakdown Voltage-Min |
75 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
0.88 V
|
| JEDEC-95 Code |
DO-35
|
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e3
|
|
| Non-rep Pk Forward Current-Max |
2 A
|
2 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
200 °C
|
| Output Current-Max |
0.15 A
|
0.15 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Rep Pk Reverse Voltage-Max |
75 V
|
75 V
|
| Reverse Current-Max |
5 µA
|
0.05 µA
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.002 µs
|
| Reverse Test Voltage |
75 V
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
24
|
1
|
| Package Description |
|
O-LALF-W2
|
| HTS Code |
|
8541.10.00.70
|
| Operating Temperature-Min |
|
-65 °C
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare 1N914B with alternatives
Compare 1N3606FV with alternatives