1N914B.TR vs JAN1N914 feature comparison

1N914B.TR National Semiconductor Corporation

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JAN1N914 Cobham Semiconductor Solutions

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Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP AEROFLEX/METELICS INC
Reach Compliance Code compliant unknown
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Non-rep Pk Forward Current-Max 4 A
Number of Elements 1 1
Number of Phases 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Output Current-Max 0.2 A 0.075 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.5 W 0.25 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 100 V 75 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.004 µs 0.005 µs
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 12
Part Package Code DO-35
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.70
Additional Feature METALLURGICALLY BONDED
Reference Standard MIL-19500/116

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