1N914BT/R vs 1N914B-TP feature comparison

1N914BT/R NXP Semiconductors

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1N914B-TP Micro Commercial Components

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS MICRO COMMERCIAL COMPONENTS CORP
Part Package Code DO-35 DO-35
Package Description O-LALF-W2 ROHS COMPLIANT PACKAGE-2
Pin Count 2 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application GENERAL PURPOSE GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-XALF-W2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 0.075 A 0.2 A
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.25 W 0.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Samacsys Manufacturer MCC
Additional Feature LOW LEAKAGE CURRENT
Forward Voltage-Max (VF) 1 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 4 A
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 0.025 µA
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

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