1N914BT50R
vs
JAN1N914
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
AEROFLEX/METELICS INC
|
| Package Description |
O-LALF-W2
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
100 V
|
75 V
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.005 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
2
|
12
|
| Part Package Code |
|
DO-35
|
| Pin Count |
|
2
|
| HTS Code |
|
8541.10.00.70
|
| Additional Feature |
|
METALLURGICALLY BONDED
|
| JEDEC-95 Code |
|
DO-35
|
| JESD-609 Code |
|
e0
|
| Output Current-Max |
|
0.075 A
|
| Power Dissipation-Max |
|
0.25 W
|
| Reference Standard |
|
MIL-19500/116
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
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