1S40 vs 1GWJ42TPB2 feature comparison

1S40 Formosa Microsemi Co Ltd

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1GWJ42TPB2 Toshiba America Electronic Components

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer FORMOSA MICROSEMI CO LTD TOSHIBA CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature LOW POWER LOSS
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.55 V 0.55 V
JESD-30 Code O-PALF-W2 O-XALF-W2
Non-rep Pk Forward Current-Max 30 A 40 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -40 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Rep Pk Reverse Voltage-Max 40 V 40 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Application GENERAL PURPOSE
Qualification Status Not Qualified
Reverse Current-Max 500 µA
Reverse Recovery Time-Max 0.035 µs
Reverse Test Voltage 40 V

Compare 1S40 with alternatives

Compare 1GWJ42TPB2 with alternatives