1SS193,LF(T vs 1SS355_R2_00001 feature comparison

1SS193,LF(T Toshiba America Electronic Components

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1SS355_R2_00001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TOSHIBA CORP PAN JIT INTERNATIONAL INC
Package Description R-PDSO-G3 R-PDSO-F2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Samacsys Manufacturer Toshiba
Application ULTRA FAST RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 1.2 V
JESD-30 Code R-PDSO-G3 R-PDSO-F2
Non-rep Pk Forward Current-Max 2 A 0.5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 2
Operating Temperature-Max 125 °C 150 °C
Output Current-Max 0.1 A 0.1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Power Dissipation-Max 0.15 W
Rep Pk Reverse Voltage-Max 85 V 90 V
Reverse Current-Max 0.5 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Reverse Test Voltage 80 V
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Additional Feature HIGH RELIABILITY
Operating Temperature-Min -55 °C

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