1SS250TE85R vs MBRAF1100T3G feature comparison

1SS250TE85R Toshiba America Electronic Components

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MBRAF1100T3G onsemi

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Part Life Cycle Code Active Active
Ihs Manufacturer TOSHIBA CORP ON SEMICONDUCTOR
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.80
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 0.75 V
JESD-30 Code R-PDSO-G3 R-PDSO-F2
Non-rep Pk Forward Current-Max 2 A 50 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 2
Operating Temperature-Max 125 °C 150 °C
Output Current-Max 0.1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Power Dissipation-Max 0.15 W
Qualification Status Not Qualified
Reverse Current-Max 1 µA
Reverse Recovery Time-Max 0.06 µs
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code SMA-FL
Package Description LEAD FREE, PLASTIC, CASE 403AA-01, SMA-FL, 2 PIN
Pin Count 2
Manufacturer Package Code 403AA
Samacsys Manufacturer onsemi
Additional Feature FREE WHEELING DIODE
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -65 °C
Rep Pk Reverse Voltage-Max 100 V
Technology SCHOTTKY
Terminal Finish Matte Tin (Sn) - annealed

Compare 1SS250TE85R with alternatives

Compare MBRAF1100T3G with alternatives