1SS417CT,L3F(T
vs
1SS417CTL3F(T
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TOSHIBA CORP
|
TOSHIBA CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.62 V
|
0.62 V
|
| JESD-30 Code |
R-XBCC-N2
|
R-XBCC-N2
|
| Non-rep Pk Forward Current-Max |
1 A
|
1 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
100 °C
|
100 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Output Current-Max |
0.1 A
|
0.1 A
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Power Dissipation-Max |
0.1 W
|
0.1 W
|
| Rep Pk Reverse Voltage-Max |
45 V
|
45 V
|
| Reverse Current-Max |
5 µA
|
5 µA
|
| Reverse Test Voltage |
40 V
|
40 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Base Number Matches |
2
|
2
|
| Samacsys Manufacturer |
|
Toshiba
|
|
|
|
Compare 1SS417CT,L3F(T with alternatives
Compare 1SS417CTL3F(T with alternatives