2MBI100N-120
vs
MBM150GS12A
feature comparison
| Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
| Ihs Manufacturer |
FUJI ELECTRIC CO LTD
|
RENESAS ELECTRONICS CORP
|
| Part Package Code |
MODULE
|
MODULE
|
| Package Description |
FLANGE MOUNT, R-XUFM-X7
|
,
|
| Pin Count |
7
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Collector Current-Max (IC) |
100 A
|
150 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
| Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
| Fall Time-Max (tf) |
500 ns
|
|
| JESD-30 Code |
R-XUFM-X7
|
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
7
|
|
| Package Body Material |
UNSPECIFIED
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
1600 W
|
|
| Power Dissipation-Max (Abs) |
800 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
|
| Terminal Form |
UNSPECIFIED
|
|
| Terminal Position |
UPPER
|
|
| Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
850 ns
|
|
| Turn-on Time-Nom (ton) |
650 ns
|
350 ns
|
| VCEsat-Max |
3.3 V
|
|
| Base Number Matches |
1
|
2
|
| Additional Feature |
|
HIGH SPEED, ULTRA SOFT FAST RECOVERY
|
|
|
|
Compare 2MBI100N-120 with alternatives
Compare MBM150GS12A with alternatives