2N2880
vs
JAN2N2880
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Factory Lead Time |
22 Weeks
|
22 Weeks
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
5 A
|
5 A
|
| Collector-Base Capacitance-Max |
150 pF
|
|
| Collector-Emitter Voltage-Max |
80 V
|
80 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
15
|
15
|
| Fall Time-Max (tf) |
300 ns
|
|
| JEDEC-95 Code |
TO-59
|
TO-59
|
| JESD-30 Code |
O-MUPM-X3
|
O-MUPM-X3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
POST/STUD MOUNT
|
POST/STUD MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
2 W
|
|
| Power Dissipation-Max (Abs) |
30 W
|
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Rise Time-Max (tr) |
300 ns
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
| Terminal Position |
UPPER
|
UPPER
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
2000 ns
|
|
| Turn-on Time-Max (ton) |
360 ns
|
|
| VCEsat-Max |
1.5 V
|
|
| Base Number Matches |
4
|
1
|
| Package Description |
|
HERMETIC SEALED PACKAGE-3
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Reference Standard |
|
MIL-S-19500
|
| Transition Frequency-Nom (fT) |
|
30 MHz
|
|
|
|
Compare 2N2880 with alternatives
Compare JAN2N2880 with alternatives