2N3055
vs
2N3055
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ASI SEMICONDUCTOR INC
|
CONTINENTAL DEVICE INDIA LTD
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
COLLECTOR
|
COLLECTOR
|
Collector Current-Max (IC) |
15 A
|
15 A
|
Collector-Emitter Voltage-Max |
60 V
|
60 V
|
Configuration |
SINGLE
|
SINGLE
|
DC Current Gain-Min (hFE) |
5
|
5
|
JEDEC-95 Code |
TO-3
|
TO-3
|
JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
200 °C
|
200 °C
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
NPN
|
NPN
|
Power Dissipation-Max (Abs) |
115 W
|
115 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
PIN/PEG
|
PIN/PEG
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
2.5 MHz
|
2.5 MHz
|
Base Number Matches |
3
|
8
|
Pbfree Code |
|
No
|
Rohs Code |
|
Yes
|
HTS Code |
|
8541.29.00.95
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Power Dissipation Ambient-Max |
|
117 W
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
VCEsat-Max |
|
3 V
|
|
|
|
Compare 2N3055 with alternatives
Compare 2N3055 with alternatives