2N4957
vs
JAN2N4957
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
BANEASA S A
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| JESD-30 Code |
O-MBCY-W4
|
O-MBCY-W4
|
| Number of Terminals |
4
|
4
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
No
|
| Part Package Code |
|
TO-72
|
| Pin Count |
|
4
|
| Samacsys Manufacturer |
|
Microsemi Corporation
|
| Case Connection |
|
ISOLATED
|
| Collector Current-Max (IC) |
|
0.03 A
|
| Collector-Base Capacitance-Max |
|
0.8 pF
|
| Collector-Emitter Voltage-Max |
|
30 V
|
| Configuration |
|
SINGLE
|
| DC Current Gain-Min (hFE) |
|
10
|
| Highest Frequency Band |
|
ULTRA HIGH FREQUENCY BAND
|
| JEDEC-95 Code |
|
TO-72
|
| JESD-609 Code |
|
e0
|
| Number of Elements |
|
1
|
| Operating Temperature-Max |
|
200 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Polarity/Channel Type |
|
PNP
|
| Power Dissipation-Max (Abs) |
|
0.2 W
|
| Power Gain-Min (Gp) |
|
17 dB
|
| Reference Standard |
|
MIL-19500/426
|
| Terminal Finish |
|
TIN LEAD
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare 2N4957 with alternatives
Compare JAN2N4957 with alternatives