2N5630
vs
2N5630TIN/LEAD
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SILICON TRANSISTOR CORP
|
CENTRAL SEMICONDUCTOR CORP
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
16 A
|
16 A
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
20
|
20
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
200 W
|
200 W
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
| Transition Frequency-Nom (fT) |
1 MHz
|
1 MHz
|
| Base Number Matches |
24
|
1
|
| Date Of Intro |
|
2018-01-31
|
| Case Connection |
|
COLLECTOR
|
| Collector-Base Capacitance-Max |
|
500 pF
|
| Collector-Emitter Voltage-Max |
|
120 V
|
| JEDEC-95 Code |
|
TO-3
|
| JESD-30 Code |
|
O-MBFM-P2
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
FLANGE MOUNT
|
| Terminal Form |
|
PIN/PEG
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
| VCEsat-Max |
|
2 V
|
|
|
|
Compare 2N5630 with alternatives
Compare 2N5630TIN/LEAD with alternatives