2N5655
vs
BD242B
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
| Ihs Manufacturer |
STMICROELECTRONICS
|
COMSET SEMICONDUCTORS
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Case Connection |
ISOLATED
|
|
| Collector Current-Max (IC) |
0.5 A
|
5 A
|
| Collector-Base Capacitance-Max |
25 pF
|
|
| Collector-Emitter Voltage-Max |
250 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
5
|
25
|
| JEDEC-95 Code |
TO-126
|
|
| JESD-30 Code |
R-PSFM-T3
|
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Polarity/Channel Type |
NPN
|
PNP
|
| Power Dissipation Ambient-Max |
20 W
|
|
| Power Dissipation-Max (Abs) |
20 W
|
40 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
10 MHz
|
3 MHz
|
| VCEsat-Max |
10 V
|
|
| Base Number Matches |
14
|
32
|
|
|
|
Compare 2N5655 with alternatives