2N5660E3
vs
2N6053
feature comparison
| Part Life Cycle Code |
Transferred
|
Contact Manufacturer
|
| Ihs Manufacturer |
MICROSEMI CORP
|
SEMICONDUCTORS INC
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
1 A
|
8 A
|
| Collector-Emitter Voltage-Max |
200 V
|
|
| Configuration |
SINGLE
|
DARLINGTON
|
| DC Current Gain-Min (hFE) |
40
|
750
|
| JEDEC-95 Code |
TO-213AA
|
|
| JESD-30 Code |
O-MBFM-P2
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Package Body Material |
METAL
|
|
| Package Shape |
ROUND
|
|
| Package Style |
FLANGE MOUNT
|
|
| Polarity/Channel Type |
NPN
|
PNP
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
PIN/PEG
|
|
| Terminal Position |
BOTTOM
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
20 MHz
|
4 MHz
|
| Base Number Matches |
1
|
22
|
| Operating Temperature-Max |
|
200 °C
|
| Power Dissipation-Max (Abs) |
|
100 W
|
|
|
|
Compare 2N5660E3 with alternatives