2N5908
vs
SI3457BDV-T1
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
SOLITRON DEVICES INC
|
VISHAY SILICONIX
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SEPARATE, 2 ELEMENTS
|
SINGLE WITH BUILT-IN DIODE
|
FET Technology |
JUNCTION
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-78
|
|
JESD-30 Code |
O-MBCY-W6
|
R-PDSO-G6
|
Number of Elements |
2
|
1
|
Number of Terminals |
6
|
6
|
Operating Mode |
DEPLETION MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
METAL
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
RECTANGULAR
|
Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
0.5 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Form |
WIRE
|
GULL WING
|
Terminal Position |
BOTTOM
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Part Package Code |
|
TSOP
|
Package Description |
|
SMALL OUTLINE, R-PDSO-G6
|
Pin Count |
|
6
|
DS Breakdown Voltage-Min |
|
30 V
|
Drain Current-Max (ID) |
|
3.7 A
|
Drain-source On Resistance-Max |
|
0.054 Ω
|
JESD-609 Code |
|
e0
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 2N5908 with alternatives
Compare SI3457BDV-T1 with alternatives