2N6032
vs
2N6032E3
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
CRIMSON SEMICONDUCTOR INC
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
|
| Additional Feature |
VERY LOW LEAKAGE
|
|
| Collector Current-Max (IC) |
50 A
|
50 A
|
| Collector-Emitter Voltage-Max |
90 V
|
90 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
10
|
10
|
| JEDEC-95 Code |
TO-3
|
TO-3
|
| JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
140 W
|
|
| Power Dissipation-Max (Abs) |
80 W
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
PIN/PEG
|
PIN/PEG
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
50 MHz
|
30 MHz
|
| VCEsat-Max |
1.3 V
|
|
| Base Number Matches |
1
|
1
|
| Case Connection |
|
COLLECTOR
|
|
|
|
Compare 2N6032 with alternatives
Compare 2N6032E3 with alternatives