2N6300E3
vs
JANTXV2N6301
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MICROSEMI CORP
|
NEW ENGLAND SEMICONDUCTOR
|
| Package Description |
TO-66, 2 PIN
|
TO-213AA, 2 PIN
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
8 A
|
8 A
|
| Collector-Emitter Voltage-Max |
60 V
|
80 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
DARLINGTON
|
| DC Current Gain-Min (hFE) |
100
|
750
|
| JEDEC-95 Code |
TO-213AA
|
TO-213AA
|
| JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
| JESD-609 Code |
e3
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
75 W
|
75 W
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
MATTE TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
PIN/PEG
|
PIN/PEG
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
12
|
| Collector-Base Capacitance-Max |
|
200 pF
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MIL
|
| Transition Frequency-Nom (fT) |
|
4 MHz
|
| VCEsat-Max |
|
2 V
|
|
|
|
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