2N6422
vs
2N6422E3
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
2 A
|
2 A
|
| Collector-Base Capacitance-Max |
180 pF
|
|
| Collector-Emitter Voltage-Max |
300 V
|
300 V
|
| Configuration |
SINGLE
|
|
| DC Current Gain-Min (hFE) |
25
|
8
|
| JEDEC-95 Code |
TO-213AA
|
TO-66
|
| JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation Ambient-Max |
35 W
|
|
| Power Dissipation-Max (Abs) |
35 W
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
PIN/PEG
|
PIN/PEG
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
10 MHz
|
|
| Turn-off Time-Max (toff) |
7000 ns
|
|
| VCEsat-Max |
0.75 V
|
|
| Base Number Matches |
1
|
1
|
|
|
|