2N6659
vs
SI1031R-T1-GE3
feature comparison
Part Life Cycle Code |
Active
|
End Of Life
|
Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
VISHAY INTERTECHNOLOGY INC
|
Package Description |
TO-39, 3 PIN
|
HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
35 V
|
20 V
|
Drain Current-Max (ID) |
2 A
|
0.14 A
|
Drain-source On Resistance-Max |
1.8 Ω
|
8 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
10 pF
|
|
JEDEC-95 Code |
TO-205AD
|
|
JESD-30 Code |
O-MBCY-W3
|
R-PDSO-G3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
METAL
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
RECTANGULAR
|
Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
6.25 W
|
0.28 W
|
Pulsed Drain Current-Max (IDM) |
3 A
|
|
Surface Mount |
NO
|
YES
|
Terminal Form |
WIRE
|
GULL WING
|
Terminal Position |
BOTTOM
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
5 ns
|
|
Turn-on Time-Max (ton) |
5 ns
|
|
Base Number Matches |
20
|
2
|
Rohs Code |
|
Yes
|
Factory Lead Time |
|
6 Weeks
|
Samacsys Manufacturer |
|
Vishay
|
Additional Feature |
|
LOW THRESHOLD
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
MATTE TIN
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
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