2N6660
vs
2N7002T7-7
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
ASI SEMICONDUCTOR INC
|
DIODES INC
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
2 A
|
0.115 A
|
Drain-source On Resistance-Max |
3 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
10 pF
|
|
JEDEC-95 Code |
TO-39
|
|
JESD-30 Code |
O-MBCY-W3
|
R-PDSO-G3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
METAL
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
RECTANGULAR
|
Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
6.25 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Form |
WIRE
|
GULL WING
|
Terminal Position |
BOTTOM
|
DUAL
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
HTS Code |
|
8541.21.00.95
|
Power Dissipation Ambient-Max |
|
0.2 W
|
|
|
|
Compare 2N6660 with alternatives
Compare 2N7002T7-7 with alternatives