2N6660
vs
2SK303-3-TA
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ASI SEMICONDUCTOR INC
|
SANYO ELECTRIC CO LTD
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
60 V
|
|
| Drain Current-Max (ID) |
2 A
|
0.02 A
|
| Drain-source On Resistance-Max |
3 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JUNCTION
|
| Feedback Cap-Max (Crss) |
10 pF
|
|
| JEDEC-95 Code |
TO-39
|
TO-236
|
| JESD-30 Code |
O-MBCY-W3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
6.25 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
| Additional Feature |
|
LOW NOISE
|
|
|
|
Compare 2N6660 with alternatives
Compare 2SK303-3-TA with alternatives