2N6660
vs
SI1031R-T1-GE3
feature comparison
| Part Life Cycle Code |
Obsolete
|
End Of Life
|
| Ihs Manufacturer |
ASI SEMICONDUCTOR INC
|
VISHAY INTERTECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
60 V
|
20 V
|
| Drain Current-Max (ID) |
2 A
|
0.14 A
|
| Drain-source On Resistance-Max |
3 Ω
|
8 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
10 pF
|
|
| JEDEC-95 Code |
TO-39
|
|
| JESD-30 Code |
O-MBCY-W3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
6.25 W
|
0.28 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Package Description |
|
HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN
|
| Factory Lead Time |
|
6 Weeks
|
| Samacsys Manufacturer |
|
Vishay
|
| Additional Feature |
|
LOW THRESHOLD
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Terminal Finish |
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare 2N6660 with alternatives
Compare SI1031R-T1-GE3 with alternatives