2N6660
vs
TP4859
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ASI SEMICONDUCTOR INC
|
ALLEGRO MICROSYSTEMS LLC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
60 V
|
|
| Drain Current-Max (ID) |
2 A
|
|
| Drain-source On Resistance-Max |
3 Ω
|
25 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JUNCTION
|
| Feedback Cap-Max (Crss) |
10 pF
|
8 pF
|
| JEDEC-95 Code |
TO-39
|
TO-226AA
|
| JESD-30 Code |
O-MBCY-W3
|
O-PBCY-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
6.25 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
19
|
| Rohs Code |
|
No
|
| Package Description |
|
CYLINDRICAL, O-PBCY-T3
|
| JESD-609 Code |
|
e0
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 2N6660 with alternatives
Compare TP4859 with alternatives