2N6660
vs
2N7002LT1G
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
DIGITRON SEMICONDUCTORS
|
ONSEMI
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| JESD-609 Code |
e0
|
e3
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn) - annealed
|
| Base Number Matches |
28
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
SOT-23 (TO-236) 3 LEAD
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
318-08
|
| HTS Code |
|
8541.21.00.95
|
| Factory Lead Time |
|
2 Days
|
| Samacsys Manufacturer |
|
onsemi
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
60 V
|
| Drain Current-Max (ID) |
|
0.115 A
|
| Drain-source On Resistance-Max |
|
7.5 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
|
5 pF
|
| JEDEC-95 Code |
|
TO-236
|
| JESD-30 Code |
|
R-PDSO-G3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
0.3 W
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare 2N7002LT1G with alternatives