2N7000
vs
2N7000-G
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Active
|
| Ihs Manufacturer |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
PLASTIC PACKAGE-3
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Changjiang Electronics Tech (CJ)
|
Microchip
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
60 V
|
60 V
|
| Drain Current-Max (ID) |
0.2 A
|
0.2 A
|
| Drain-source On Resistance-Max |
5 Ω
|
5 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
5 pF
|
5 pF
|
| JEDEC-95 Code |
TO-92
|
TO-92
|
| JESD-30 Code |
O-PBCY-W3
|
O-PBCY-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.35 W
|
1 W
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
6
|
| Rohs Code |
|
Yes
|
| HTS Code |
|
8542.39.00.01
|
| Factory Lead Time |
|
6 Weeks, 4 Days
|
| Additional Feature |
|
HIGH INPUT IMPEDANCE
|
| JESD-609 Code |
|
e3
|
| Operating Temperature-Min |
|
-55 °C
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
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