2N7000-G
vs
2N7000RLRE
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MOTOROLA INC
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.39.00.01
|
8541.21.00.95
|
| Factory Lead Time |
6 Weeks, 4 Days
|
|
| Samacsys Manufacturer |
Microchip
|
|
| Additional Feature |
HIGH INPUT IMPEDANCE
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
60 V
|
60 V
|
| Drain Current-Max (ID) |
0.2 A
|
0.2 A
|
| Drain-source On Resistance-Max |
5 Ω
|
5 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
5 pF
|
5 pF
|
| JEDEC-95 Code |
TO-92
|
TO-92
|
| JESD-30 Code |
O-PBCY-T3
|
O-PBCY-T3
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
1 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
6
|
1
|
| Package Description |
|
CYLINDRICAL, O-PBCY-T3
|
| Power Dissipation Ambient-Max |
|
0.35 W
|
|
|
|
Compare 2N7000-G with alternatives
Compare 2N7000RLRE with alternatives