2N7002-G vs 2N6660 feature comparison

2N7002-G Microchip Technology Inc

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2N6660 Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Package Description GREEN PACKAGE-3 TO-39, 3 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.39.00.01 8542.39.00.01
Samacsys Manufacturer Microchip Microchip
Additional Feature HIGH INPUT IMPEDANCE HIGH INPUT IMPEDANCE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.115 A 0.41 A
Drain-source On Resistance-Max 7.5 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF 10 pF
JEDEC-95 Code TO-236AB TO-39
JESD-30 Code R-PDSO-G3 O-MBCY-W3
JESD-609 Code e3 e4
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY METAL
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.36 W 6.25 W
Qualification Status Not Qualified Not Qualified
Reference Standard TS 16949 TS 16949
Surface Mount YES NO
Terminal Finish MATTE TIN NICKEL GOLD
Terminal Form GULL WING WIRE
Terminal Position DUAL BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Factory Lead Time 6 Weeks
Case Connection DRAIN
Power Dissipation Ambient-Max 6.25 W
Pulsed Drain Current-Max (IDM) 3 A
Turn-off Time-Max (toff) 10 ns
Turn-on Time-Max (ton) 10 ns

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