2N7002E-T1 vs 2N7002-AU_R2_000A1 feature comparison

2N7002E-T1 Vishay Siliconix

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2N7002-AU_R2_000A1 PanJit Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY SILICONIX PAN JIT INTERNATIONAL INC
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.24 A 0.3 A
Drain-source On Resistance-Max 3 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
HTS Code 8541.21.00.95
Additional Feature ULTRA LOW RESISTANCE
Feedback Cap-Max (Crss) 8 pF
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.35 W
Reference Standard AEC-Q101; TS 16949
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 2N7002E-T1 with alternatives

Compare 2N7002-AU_R2_000A1 with alternatives