2N7002E-T1 vs 2N7002LT1 feature comparison

2N7002E-T1 Vishay Intertechnologies

Buy Now Datasheet

2N7002LT1 Motorola Mobility LLC

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MOTOROLA INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 0.24 A 0.115 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.35 W
Surface Mount YES YES
Base Number Matches 2 5
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Manufacturer Package Code CASE 318-08
HTS Code 8541.21.00.95
DS Breakdown Voltage-Min 60 V
Drain-source On Resistance-Max 7.5 Ω
Feedback Cap-Max (Crss) 5 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation Ambient-Max 0.2 W
Qualification Status Not Qualified
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare 2N7002E-T1 with alternatives

Compare 2N7002LT1 with alternatives