2N7002K-AU_R1_000A2 vs 2N7002K-T1-E3 feature comparison

2N7002K-AU_R1_000A2 PanJit Semiconductor

Buy Now Datasheet

2N7002K-T1-E3 Vishay Siliconix

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PANJIT INTERNATIONAL INC VISHAY SILICONIX
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Date Of Intro 2018-10-01
Samacsys Manufacturer PANJIT Vishay
Additional Feature ULTRA LOW RESISTANCE LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.3 A 0.3 A
Drain-source On Resistance-Max 3 Ω 4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Finish TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Pbfree Code Yes
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
HTS Code 8541.21.00.95
JEDEC-95 Code TO-236AB
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.35 W
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30

Compare 2N7002K-AU_R1_000A2 with alternatives

Compare 2N7002K-T1-E3 with alternatives