2N7002K-H
vs
2N7002K-T1
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
FORMOSA MICROSEMI CO LTD
|
VISHAY SILICONIX
|
Package Description |
,
|
PACKAGE-3
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
Drain Current-Max (ID) |
0.3 A
|
0.3 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Number of Elements |
1
|
1
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
0.35 W
|
|
Surface Mount |
YES
|
YES
|
Base Number Matches |
1
|
2
|
Part Package Code |
|
SOT-23
|
Pin Count |
|
3
|
Additional Feature |
|
LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING
|
DS Breakdown Voltage-Min |
|
60 V
|
Drain-source On Resistance-Max |
|
2 Ω
|
Feedback Cap-Max (Crss) |
|
2.5 pF
|
JEDEC-95 Code |
|
TO-236
|
JESD-30 Code |
|
R-PDSO-G3
|
Number of Terminals |
|
3
|
Operating Mode |
|
ENHANCEMENT MODE
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Qualification Status |
|
Not Qualified
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
Compare 2N7002K-H with alternatives
Compare 2N7002K-T1 with alternatives