2N7002K-T1-GE3
vs
2N7002TT1T2
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
VISHAY SILICONIX
|
VISHAY SILICONIX
|
Part Package Code |
SOT-23
|
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
Pin Count |
3
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.95
|
|
Samacsys Manufacturer |
Vishay
|
|
Additional Feature |
LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
0.3 A
|
0.115 A
|
Drain-source On Resistance-Max |
4 Ω
|
7.5 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-236AB
|
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
0.35 W
|
|
Power Dissipation-Max (Abs) |
0.35 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn)
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Feedback Cap-Max (Crss) |
|
5 pF
|
|
|
|
Compare 2N7002K-T1-GE3 with alternatives
Compare 2N7002TT1T2 with alternatives