2N7002L6327 vs 2N7002EQ-13-F feature comparison

2N7002L6327 Infineon Technologies AG

Buy Now Datasheet

2N7002EQ-13-F Diodes Incorporated

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG DIODES INC
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code compliant compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.3 A 0.292 A
Drain-source On Resistance-Max 3 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3 pF 2.8 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W 0.7 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 24 Weeks
Operating Temperature-Min -55 °C
Reference Standard AEC-Q101; IATF 16949; MIL-STD-202

Compare 2N7002L6327 with alternatives

Compare 2N7002EQ-13-F with alternatives