2N7002LT1G
vs
2N7002LT3
feature comparison
| Part Life Cycle Code |
|
Transferred
|
| Ihs Manufacturer |
|
MOTOROLA INC
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
|
unknown
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.21.00.95
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
60 V
|
| Drain Current-Max (ID) |
|
0.115 A
|
| Drain-source On Resistance-Max |
|
7.5 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
|
5 pF
|
| JEDEC-95 Code |
|
TO-236AB
|
| JESD-30 Code |
|
R-PDSO-G3
|
| JESD-609 Code |
|
e0
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
|
0.2 W
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Element Material |
|
SILICON
|
| Base Number Matches |
|
1
|
|
|
|
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