2N7002LT7G
vs
2N7002LT1
feature comparison
Pbfree Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ONSEMI
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
Manufacturer Package Code |
318-08
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
|
Factory Lead Time |
20 Weeks
|
|
Date Of Intro |
2019-03-14
|
|
Samacsys Manufacturer |
onsemi
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
Single
|
DS Breakdown Voltage-Min |
60 V
|
|
Drain Current-Max (ID) |
0.115 A
|
|
Drain-source On Resistance-Max |
7.5 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
5 pF
|
|
JEDEC-95 Code |
TO-236
|
|
JESD-30 Code |
R-PDSO-G3
|
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
|
Number of Terminals |
3
|
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn) - annealed
|
|
Terminal Form |
GULL WING
|
|
Terminal Position |
DUAL
|
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
1
|
5
|
Rohs Code |
|
No
|
Package Description |
|
,
|
Drain Current-Max (Abs) (ID) |
|
0.115 A
|
Power Dissipation-Max (Abs) |
|
0.2 W
|
|
|
|
Compare 2N7002LT7G with alternatives