2N7002LT7H vs 2N6660 feature comparison

2N7002LT7H onsemi

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2N6660 Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ON SEMICONDUCTOR MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Date Of Intro 2019-03-14
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.115 A 0.41 A
Drain-source On Resistance-Max 7.5 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF 10 pF
JEDEC-95 Code TO-236 TO-39
JESD-30 Code R-PDSO-G3 O-MBCY-W3
JESD-609 Code e3 e4
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY METAL
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Surface Mount YES NO
Terminal Finish MATTE TIN NICKEL GOLD
Terminal Form GULL WING WIRE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON SILICON
Base Number Matches 1 28
Package Description TO-39, 3 PIN
HTS Code 8542.39.00.01
Samacsys Manufacturer Microchip
Additional Feature HIGH INPUT IMPEDANCE
Case Connection DRAIN
Power Dissipation Ambient-Max 6.25 W
Power Dissipation-Max (Abs) 6.25 W
Pulsed Drain Current-Max (IDM) 3 A
Qualification Status Not Qualified
Reference Standard TS 16949
Transistor Application SWITCHING
Turn-off Time-Max (toff) 10 ns
Turn-on Time-Max (ton) 10 ns

Compare 2N7002LT7H with alternatives

Compare 2N6660 with alternatives